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IKW40N120H3英飛凌IGBT單管

The IKW40N120H3 is a 1200V Discrete IGBT with very soft, fast recovery anti-parallel diode designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz. The key feature of this family is a MOSFET-like turn-off switching behaviour and thus leading to low turn off losses. Discrete IGBT is ideal for hard switching applications as well as soft switching applications and other resonant applications.
英飛凌IKW40N120H3
英飛凌K40H1203 / IKW40N120H3是英飛凌第三代1200V高開關速度IGBT單管, 能夠完美替代K40T120 / K40T1202 ,專用于焊接、太陽能發電逆變器和UPS等IGBT高頻應用領域。
  • Low switching losses for high efficiency
  • Fast switching behaviour with low EMI emissions
  • Low gate resistor selection possible (down to 5R) whilst maintaining excellent switching behaviour
  • Short circuit capability
  • Excellent performance
  • Low switching and conduction losses
K40H1203 / IKW40N120H3 特點:
•最高結溫度為175℃
•非常低VCEsat
•低開關損耗
•較高的開關堅韌性
•內置快速恢復反并聯二極管
根據JEDEC1合格為目標
•無鉛引腳電鍍符合RoHS標準

 
應用范圍:
•UPS(不中斷電源/不間斷電源)
•焊接器
•太陽能發電用逆變器

IKW40N120H3 產品信息:
集電極直流電流: 40A
集電極發射飽和電壓, Vce: 2.4V
晶體管封裝類型: TO-247
功耗 Pd: 483W
產品范圍: -
針腳數: 3引腳
工作溫度最高值: 175°C
集電極發射電壓, Vceo: 1.2kV

原產地: Philippines
進行最后一道重要生產流程所在的國家
 
RoHS 合規:  是
稅則號: 85412900
重量(千克): .00542

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